High-speed heteroepitaxial In0.52Al0.48As/In0.53Ga0.47As/InP PIN photodiodes with superlattice structure

Abstract

The article provides the PIN-photodiode semiconductor structure In0.52Al0.48As/In0.53Ga0.47As/InP computer simulation results. The structure was grown on an InP-substrate by the method of molecular beam epitaxy. In modeling, PIN-photodiode mathematical model was constructed, with the help of which photocurrent values were obtained for various thicknesses of the undoped section in photodiode absorbing layer. The photodiode response time values are also obtained.