The Radiation Effect on the Parameters of Reference Voltage Sources and Charge-Sensitive Amplifiers of the Structured Array MH2XA010

O. Dvornikov, V. Dziatlau, N. Prokopenko, V. Tchekhovski, A. Bugakova
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Abstract

Theeffect of 6 MeV fast electrons and ${}^{60}{\mathbf{Co}}$ gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation $\mathbf{D}_{\mathbf{G}}$ = 2.04 Mrad and the electron fluence 3.0×1014 el/cm2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.
辐射对MH2XA010结构阵列基准电压源和电荷敏感放大器参数的影响
比较了6mev快速电子和${}^{60}{\mathbf{Co}}$ γ辐射对结构阵列(SA) MH2XA010中参考电压源(RVS)和电荷敏感放大器(CSA)模拟元件参数的影响。结果表明,在γ辐射吸收剂量$\mathbf{D}_{\mathbf{G}}$ = 2.04 Mrad和电子通量3.0×1014 el/cm2时,RVS和CSA参数的变化不超过工作温度范围的规范值。SA MH2XA010推荐用于制造在恶劣工况下工作的模拟传感器接口。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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