{"title":"Non-volatile optical memory based on a slot nanobeam resonator filled with GST material","authors":"Hao Hu, Hanyu Zhang, Linjie Zhou, Youhua Xu, Liangjun Lu, Jianping Chen, B. Rahman","doi":"10.1109/ACP.2018.8596243","DOIUrl":null,"url":null,"abstract":"We propose a multi-level phase-change memory device based on a Ge2Sb2Te5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.","PeriodicalId":431579,"journal":{"name":"2018 Asia Communications and Photonics Conference (ACP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Asia Communications and Photonics Conference (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACP.2018.8596243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We propose a multi-level phase-change memory device based on a Ge2Sb2Te5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.