Sub-0.2 micron gate lithography using E-beam, X-ray and optical technologies-an overview

Abstract

The number of options for performing sub-0.2 um GaAs FET gate lithography has expanded recently to include shaped-beam e-beam systems, prototype X-ray steppers and optical steppers using phase-shift mask (PSM) technology. An overview of the alternatives is presented which may aid in selection of the "best" technology option for a given application.