Development and Characterization of Ti/TiN/Al Film Compensation Resistor with Low Resistance

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706074

Wei Zhang, Xiulan Cheng, Xiaodong Wang

引用次数: 0

Abstract

Low compensation Ti/TiN/Al film resistor including resistance and two pads was designed and fabricated with one step of lithography and metal sputter. The fabricated 8$\mu$m width near 50$\Omega$ resistor was stable and precise after annealing, which can be loaded with 8V DC voltage for over 60 minutes.

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低阻Ti/TiN/Al薄膜补偿电阻器的研制与表征

采用光刻和金属溅射一步法制备了低补偿Ti/TiN/Al薄膜电阻器。在50 $\Omega$附近制作的8 $\mu$ m宽度电阻经退火后稳定、精确，可在8V直流电压下加载60分钟以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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