A finite width impurity source model for linear doping profiles

Abstract

In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile.