Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering

Abstract

This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.