Supply voltage degradation aware analytical placement

A. Kahng, Bao Liu, Qinke Wang
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引用次数: 14

Abstract

Increasingly significant power/ground supply voltage degradation in nanometer VLSI designs leads to system performance degradation and even malfunction. Existing techniques focus on design and optimization of power/ground supply networks. In this paper, we propose supply voltage degradation aware placement, e.g., to reduce maximum supply voltage degradation by relocation of supply current sources. We represent supply voltage degradation at a P/G node as a function of supply currents and effective impedances (i.e., effective resistances in DC analysis) in a P/G network, and integrate supply voltage degradation in an analytical placement objective. For scalability and efficiency improvement, we apply random-walk, graph contraction and interpolation techniques to obtain effective resistances. Our experimental results show an average 20.9% improvement of worst-case voltage degradation and 11.7% improvement of average voltage degradation with only 4.3% wirelength increase.
供电电压退化感知分析放置
在纳米级超大规模集成电路设计中,越来越明显的电源/地电源电压下降导致系统性能下降甚至故障。现有的技术主要集中在电源/地供电网络的设计和优化上。在本文中,我们提出了供电电压退化感知放置,例如,通过重新安置供电电流源来减少最大供电电压退化。我们将P/G节点的供电电压退化表示为P/G网络中供电电流和有效阻抗(即直流分析中的有效电阻)的函数,并将供电电压退化整合到分析放置目标中。为了提高可扩展性和效率,我们应用随机漫步、图收缩和插值技术来获得有效的阻力。实验结果表明,仅增加4.3%的带宽,最坏情况电压退化平均改善20.9%,平均电压退化改善11.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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