High-performance InGaAs-on-silicon avalanche photodiodes

Optical Fiber Communication Conference and Exhibit Pub Date : 2002-03-17 DOI:10.1109/OFC.2002.1036407

A. Pauchard, M. Bitter, D. Sengupta, Z. Pan, S. Hummel, Y. Lo, Y. Kang, P. Mages, K. L. Yu

引用次数: 7

Abstract

We have demonstrated a high-performance InGaAs-on-silicon APD that exhibits a very low dark current density of 0.7 mA/cm/sup 2/, high avalanche gain (M/spl Gt/100), an RC-limited bandwidth of 1.45 GHz, and a gain-bandwidth product of 290 GHz. We estimate that our device can achieve a sensitivity improvement of 5 dB compared to state-of-the-art InP-based APD receivers. We are currently measuring the APD excess noise factor. We will report this measurement at the conference.

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高性能硅上砷化镓雪崩光电二极管

我们展示了一种高性能的InGaAs-on-silicon APD，具有极低的暗电流密度(0.7 mA/cm/sup 2/)，高雪崩增益(M/spl Gt/100)， rc限制带宽为1.45 GHz，增益带宽积为290 GHz。我们估计，与最先进的基于inp的APD接收器相比，我们的设备可以实现5 dB的灵敏度提高。我们目前正在测量APD的过量噪声系数。我们将在会议上报告这个测量结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical Fiber Communication Conference and Exhibit

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