Linear PA at mm-Wave band for 5G application

Abstract

A highly linear power amplifier (PA) at Ka-band is implemented in 28-nm bulk CMOS process. Operating at a deep class-AB mode with appropriate 2nd harmonic control circuit, a highly linear and efficient PA is designed at mmwave band. This PA architecture provides a linear PA operation closer to the saturated power, providing high efficiency. Also elaborated harmonic tuning and neutralization techniques are used to further improve the gain and stability. A 2-stack PA is designed for higher gain and output power than a common source PA. Additionally, the memory effect of the PA is suppressed to increase the video bandwidth in the GHz range. This amplifier is quite suitable for 5G application.