Reserch on picosecond passively Q-switched microchip laser

T. Inoue, T. Koike, K. Tei, S. Yamaguchi, J. Enokidani, S. Sumida
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Abstract

Compact and simple pico second lasers are required in many applications like fine material processing. we have been developing a pulsed fiber laser which consist of a fiber amplifier system and a passively Q-switched microchip laser as a seed source. In this presentation, we report the test results of the passively Q-switched microchip laser. The pump source is a diode laser coupled to single mode fiber with the wavelength of 808 nm and the maximum power of 214 mW. The microchip is composed of a combination of gain medium and a saturable absorber, and we used two types of microchip. There are differences in the thickness of the gain medium and dopant ratio of neodymium. The gain medium is Nd:YVO4. The thickness are 100 μm with 3% neodymium doping and 300 μm with 2% neodymium doping. As a result, We obtained 6.1 mW laser output with 90 ps pulse width, 1.3 MHz repetition frequency at short gain medium. And the other one got 14 mW laser output power with 161ps pulse width, 1.4 MHz repetition frequency. The single longitudinal operation was achieved for both of them.
皮秒被动调q微芯片激光器的研究
紧凑和简单的皮秒激光器需要在许多应用,如精细材料加工。我们一直在开发一种脉冲光纤激光器,它由光纤放大器系统和被动调q微芯片激光器作为种子源组成。在这个报告中,我们报告了被动调q微芯片激光器的测试结果。泵浦源是一个耦合到单模光纤的二极管激光器,波长为808 nm,最大功率为214 mW。该微芯片由增益介质和可饱和吸收体组成,采用了两种类型的微芯片。增益介质的厚度和钕的掺杂比例存在差异。增益介质为Nd:YVO4。当掺钕量为3%时,薄膜厚度为100 μm;当掺钕量为2%时,薄膜厚度为300 μm。在短增益介质下,我们获得了脉冲宽度为90 ps,重复频率为1.3 MHz的6.1 mW激光输出。另一种激光输出功率为14mw,脉冲宽度161ps,重复频率1.4 MHz。两者均实现了单次纵向手术。
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