A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication

Abstract

A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25.1 dBm and a peak power-added efficiency $(\text{PAE}_{\max})$ of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB Psat bandwidth are 75% and 51%, respectively.