Ultra-High Frequency GaN Nanoscale Vacuum Electronic Devices

Abstract

The performances of the GaN nanoscale vacuum electronic devices (NVEDs) were investigated in this paper by theoretical simulation, considering the effects of the device structures. By choosing a proper air channel and aspect ratio, a GaN NVED with a low turn-on voltage and a strong output current can be achieved, showing good agreements with the experiments. The GaN NVED can provide high frequency output in THz band, due to the free transport of electrons in the very small air gap.