{"title":"Growth of Ge1-xSnxAlloys by Remote Plasma-Enhanced Chemical Vapor Deposition","authors":"B. Claflin, G. Grzybowski, J. Duran","doi":"10.1109/SiPhotonics55903.2023.10141897","DOIUrl":null,"url":null,"abstract":"Remote plasma-enhanced CVD is used to grow Ge<inf>1-x</inf>Sn<inf>x</inf>, on Ge, Si, and Al<inf>2</inf>O<inf>3</inf> substrates with x≤0.19 and d > 1 µm. The structural, optical, and electrical properties of these alloys are characterized by XRD, AFM, spectroscopic ellipsometry, and Hall-effect. Characteristics of heterostructure p-n Ge<inf>1-x</inf>Sn<inf>x</inf>/Si devices are presented.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Remote plasma-enhanced CVD is used to grow Ge1-xSnx, on Ge, Si, and Al2O3 substrates with x≤0.19 and d > 1 µm. The structural, optical, and electrical properties of these alloys are characterized by XRD, AFM, spectroscopic ellipsometry, and Hall-effect. Characteristics of heterostructure p-n Ge1-xSnx/Si devices are presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
