Thermally Induced Hole-filling Process In Donor-acceptor Electron Transfer System

Abstract

Photon-gated spectral hole-burning in the organic donor-acceptor electron transfer system has attracted extensively interests because of its application background in frequency-domain optical storage. Several materials have been investigated from the aspects in hole-burning process[1–3], such as photon-gating effect, temperature dependence of hole width and hole-burning efficiency. A few works on hole-filling processes have been done[4], however, the filling mechanisms are not clear now.