Super self-aligned process technology (SST) and its applications

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51034

H. Ichino, M. Suzuki, S. Konaka, T. Wakimoto, T. Sakai

引用次数: 20

Abstract

SST-1B technology, an advanced version of SST-1A, and its applications are described. The main feature is utilization of the selectively ion-implanted collector process to improve shallow base-collector profiles to reduce base width and intrinsic base resistance, and to suppress the base pushout effect. A cutoff frequency of 25.7 GHz and the basic gate delays of 20.5 ps for NTL and 34.1 ps for ECL have been obtained. Using this technology, a number of very high-speed ICs-a 18-GHz 1/8 divider, a 2-Gbsps 6-bit AD converter, and 43-ps/5.2-GHz macrocell array LSIs-have been developed. Concerning future performance, a cutoff frequency of more than 50 GHz for a scaled-down transistor is expected.<>

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超自对准工艺技术及其应用

介绍了SST-1A的升级版SST-1B技术及其应用。主要特点是利用选择性离子注入集电极工艺改善了浅基极-集电极轮廓，减小了基极宽度和本征基极电阻，抑制了基极推出效应。得到的截止频率为25.7 GHz, NTL和ECL的基本栅极延迟分别为20.5 ps和34.1 ps。利用该技术，已经开发了许多非常高速的ic - 18 ghz 1/8分频器，2 gbsps 6位AD转换器和43-ps/5.2 ghz macrocell阵列lsi。考虑到未来的性能，预计缩小晶体管的截止频率将超过50 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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