Dielectric Properties of Alkoxy-Derived BaTiO3 Films on LaNiO3/Pt/TiOx/Si(100)

Abstract

BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.