Active simultaneous harmonic source and load pull assisted by local polyharmonic distortion models

R. Leoni, S. Harris, David G. Ries
{"title":"Active simultaneous harmonic source and load pull assisted by local polyharmonic distortion models","authors":"R. Leoni, S. Harris, David G. Ries","doi":"10.1109/MWSYM.2010.5516051","DOIUrl":null,"url":null,"abstract":"The efficiency of a power amplifier is a strong function of the core transistor technology and the circuitry that is wrapped around it. There are many theoretical approaches to obtaining full DC-to-RF conversion from an ideal transistor, however real-world technologies do not perform equally well with each. The parasitic reactances and non-ideal DC characteristics of a transistor technology result in matching and bias requirements that can deviate significantly from those of ideal theory. In this paper we describe the use of an active simultaneous source and load pull system that quickly ascertains the conditions required to achieve a transistor technology's peak efficiency performance. The speed with which the system is able to achieve these results is facilitated by local polyharmonic distortion models that provide a quick and reliable method for finding the path of steepest ascent.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5516051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

The efficiency of a power amplifier is a strong function of the core transistor technology and the circuitry that is wrapped around it. There are many theoretical approaches to obtaining full DC-to-RF conversion from an ideal transistor, however real-world technologies do not perform equally well with each. The parasitic reactances and non-ideal DC characteristics of a transistor technology result in matching and bias requirements that can deviate significantly from those of ideal theory. In this paper we describe the use of an active simultaneous source and load pull system that quickly ascertains the conditions required to achieve a transistor technology's peak efficiency performance. The speed with which the system is able to achieve these results is facilitated by local polyharmonic distortion models that provide a quick and reliable method for finding the path of steepest ascent.
局部多谐失真模型辅助下的有源同步谐波和负载拉
功率放大器的效率是核心晶体管技术和围绕它的电路的强大功能。有许多理论上的方法可以从理想的晶体管获得完全的dc到rf转换,但是现实世界的技术并不能在每一种情况下都表现得同样好。晶体管技术的寄生电抗和非理想直流特性导致匹配和偏置要求可能显著偏离理想理论。在本文中,我们描述了一个有源和负载同步牵引系统的使用,该系统可以快速确定实现晶体管技术的峰值效率性能所需的条件。局部多谐失真模型提供了一种快速可靠的方法来寻找最陡的上升路径,从而促进了系统能够实现这些结果的速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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