Improved high temperature retention and endurance in HfON trapping memory with double quantum barriers

Abstract

We have compared the device performance of double-quantum-barrier charge-trapping memory of a TaN/Ir₃Si-[HfAlO-LaAlO₃]-HfON_0.2-[HfAlO-SiO₂]-Si device with single barrier non-volatile memory MONOS devices at close EOT. At 150°C under fast 100 ¿s and low ±9 V P/E, the double-quantum-barrier charge-trapping device shows a 3.2 V initial ¿V_th and 2.7 V 10-year extrapolated retention. This retention decay rate is much improved from single barrier device.