Table-based FET model assembled from small-signal models

Abstract

A data-table based large-signal MESFET model is presented based on an ensemble of bias-dependent small-signal equivalent circuits. The model is capable of accurate simulation of small-signal S-parameters over the data-acquisition bias range. In addition to the dc current sources, the model contains two quasi-static charge sources and RF current sources, which are generated by integration of respective intrinsic small-signal element values with respect to the port voltages. All equivalent elements are obtained by cubic spline interpolation. Extrapolation of the model beyond the measurement range is taken into account. The model is extracted by an in-house software without involving optimization. The validity of the model is demonstrated by comparing the simulation of small-signal S-parameters over a wide bias range and power performance to the measured data.