{"title":"A 0.32-V 151-nW Voltage Reference for Smart IoT Applications","authors":"Yuntao Wu, Mingyi Chen","doi":"10.1109/SmartIoT55134.2022.00015","DOIUrl":null,"url":null,"abstract":"In this article, a low-voltage low-power voltage reference used for smart IoT devices is presented. The proposed volt-age reference is supported by subthreshold MOSFETs with compensation of proportional-to-absolute-temperature (PTAT) voltage and complementary-to-absolute-temperature (CTAT) gate-source voltage. A voltage doubler boosts the input voltage so that the reference can operate at an extra low voltage. Implemented with 180 nm CMOS technology, simulation results show that the voltage reference obtains a TC of 12 ppm $/^{\\circ}\\mathrm{C}$ under 0.32 V supply within $\\text{-}20\\ ^{\\circ}\\mathrm{C}$ to 120 $^{\\circ}\\mathbf{C}$. The voltage reference has a power consumption of 151 nW, with a total noise of 0.9 $\\mu \\mathbf{V}$ rms(0.5–10M Hz) and PSRR of −50 dB.","PeriodicalId":422269,"journal":{"name":"2022 IEEE International Conference on Smart Internet of Things (SmartIoT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Smart Internet of Things (SmartIoT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SmartIoT55134.2022.00015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this article, a low-voltage low-power voltage reference used for smart IoT devices is presented. The proposed volt-age reference is supported by subthreshold MOSFETs with compensation of proportional-to-absolute-temperature (PTAT) voltage and complementary-to-absolute-temperature (CTAT) gate-source voltage. A voltage doubler boosts the input voltage so that the reference can operate at an extra low voltage. Implemented with 180 nm CMOS technology, simulation results show that the voltage reference obtains a TC of 12 ppm $/^{\circ}\mathrm{C}$ under 0.32 V supply within $\text{-}20\ ^{\circ}\mathrm{C}$ to 120 $^{\circ}\mathbf{C}$. The voltage reference has a power consumption of 151 nW, with a total noise of 0.9 $\mu \mathbf{V}$ rms(0.5–10M Hz) and PSRR of −50 dB.