A 0.32-V 151-nW Voltage Reference for Smart IoT Applications

Yuntao Wu, Mingyi Chen
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引用次数: 1

Abstract

In this article, a low-voltage low-power voltage reference used for smart IoT devices is presented. The proposed volt-age reference is supported by subthreshold MOSFETs with compensation of proportional-to-absolute-temperature (PTAT) voltage and complementary-to-absolute-temperature (CTAT) gate-source voltage. A voltage doubler boosts the input voltage so that the reference can operate at an extra low voltage. Implemented with 180 nm CMOS technology, simulation results show that the voltage reference obtains a TC of 12 ppm $/^{\circ}\mathrm{C}$ under 0.32 V supply within $\text{-}20\ ^{\circ}\mathrm{C}$ to 120 $^{\circ}\mathbf{C}$. The voltage reference has a power consumption of 151 nW, with a total noise of 0.9 $\mu \mathbf{V}$ rms(0.5–10M Hz) and PSRR of −50 dB.
用于智能物联网应用的0.32 v 151-nW基准电压
本文介绍了一种用于智能物联网设备的低压低功率电压基准。所提出的基准电压由亚阈值mosfet支持,并具有比例-绝对温度(PTAT)电压和互补-绝对温度(CTAT)门源电压的补偿。电压倍频器提高输入电压,使基准电压可以在一个特别低的电压下工作。仿真结果表明,该基准电压在0.32 V电压下,在$\text{-}20\ \circ}\ mathm {C}$至120 $^{\circ}\mathbf{C}$范围内的TC值为12 ppm $/^{\circ}\ mathbf{C}$。基准电压功耗为151 nW,总噪声为0.9 $\mu \mathbf{V}$ rms(0.5-10M Hz), PSRR为−50 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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