High Resolution MP Based Electro Thermal Modelling of PV Inverter for Junction Temperature Estimation

Abstract

This study presents the High-Resolution Mission Profile (MP) based Electro Thermal Modeling of PV Inverter for the estimation of Junction Temperature (JT). Environmental conditions like Solar irradiance and Ambient temperature, also called as Mission profile (MP) affects the reliability performance of the grid-connected PV inverter. The JT of power semiconductors is the fundamental factor for the assessment of reliability performance of PV inverter. As the MP varies the JT of power semiconductor varies. Hence it is needed to estimate the JT of power semiconductor considering MP. From electro thermal modelling JT of power semiconductor devices is estimated. In this paper high resolution MP based electro-thermal modelling of power semiconductor is proposed to estimate the junction temperature. This paper considers a test case of 3-kW single-phase, single-stage grid-connected PV inverter for the junction temperature estimation. IGW30N60H3 IGBT from Infineon manufacturer is considered as a power semiconductor device in PV inverter. Electro-thermal model of IGW30N60H3 IGBT develops in PLECS simulation platform. High Resolution MP for one year with one-minute resolution is logged at Hyderabad, Telangana, India. Also, High Resolution MP for one year with one-minute resolution at Denmark location is logged from SODA for comparison. With this practical high-resolution MP data, JT is estimated at both Indian and Denmark location. The effectiveness of the proposed high-resolution MP based electro thermal modeling is validated by correlating the case temperature of PV inverter with the estimated junction temperature. Positive correlation gives the effectiveness of the proposed method.