3.3kV SiC MOSFETs designed for low on-resistance and fast switching

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229103

A. Bolotnikov, P. Losee, K. Matocha, J. Glaser, J. Nasadoski, Lei Wang, A. Elasser, S. Arthur, Z. Stum, P. Sandvik, Y. Sui, T. Johnson, J. Sabate, L. Stevanovic

引用次数: 43

Abstract

This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with 3-level converter stacks of faster 1.7kV IGBTs.

查看原文本刊更多论文

3.3kV SiC mosfet设计用于低导通电阻和快速开关

本文讨论了3.3kV SiC垂直dmosfet的优化和制造的最新进展。与最新一代的3.3kV快速Si igbt相比，该器件显示出优越的导通状态和开关损耗，并有望将高压功率转换系统的最高开关频率扩展到数十kHz以上，而无需使用更快的1.7kV igbt的3级转换器堆叠增加零件数量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2012 24th International Symposium on Power Semiconductor Devices and ICs

自引率

0.00%

发文量