Comparing proton and neutron induced SEU cross section in FPGA

T. Vanat, F. Krizek, J. Ferencei, H. Kubátová
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引用次数: 4

Abstract

Single event upsets (SEU) are induced by an electric charge deposited in the material of the chip. The origin of the charge can be either from outside of the chip or it can be generated inside as a result of a nuclear reaction. We have measured the cross section of SEUs in FPGA using protons (directly ionizing particles) and neutrons (indirectly ionizing particles). Used energies up to 34 MeV are in the range, where the differences in the proton's ionizing power are most significant thanks to the Bragg peak. Measurements have shown, that the direct ionization is not the dominant effect causing SEU.
FPGA中质子与中子诱导SEU截面的比较
单事件扰动(SEU)是由沉积在芯片材料中的电荷引起的。电荷的来源既可以来自芯片外部,也可以作为核反应的结果在芯片内部产生。我们在FPGA中使用质子(直接电离粒子)和中子(间接电离粒子)测量了seu的横截面。使用的能量高达34兆电子伏,在这个范围内,由于布拉格峰,质子电离功率的差异是最显著的。测量结果表明,直接电离并不是导致单粒子辐射的主要因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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