Improve the Robustness of Diffusive Memristor based True Random Number Generator via Voltage-to-Time Transformation

Haoyang Li, Yuyang Fu, Tian-Qing Wan, Yi Lu, Ling Yang, Yi Li
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Abstract

Fluctuations in Vth distribution can pose reliability problems for true random number generators (TRNGs). Here, we propose an explanation of the mechanism for voltage-to-time transformation scheme, which improve the reliability of TRNGs by fine-grained segmentation of time. Compared with conventional schemes, test scheme in this work can tolerate 50% cycle-to-cycle (C2C) and device-to-device (D2D) distribution shift and ensure the independence of random bits. This work provides a distinct and reliable evidence for tolerating frequent parameter shifts in voltage-to-time transformation scheme, which increase Vth robustness, reduce device requirements in practical use, and avoid redundant measurements and extra calibration in the test.
通过电压-时间变换提高扩散记忆电阻真随机数发生器的鲁棒性
Vth分布的波动会给真随机数发生器(trng)带来可靠性问题。在此,我们提出了电压-时间转换方案的机制解释,该方案通过时间的细粒度分割来提高trng的可靠性。与传统的测试方案相比,该测试方案可以容忍50%的C2C和D2D分布偏移,并保证随机比特的独立性。这项工作为电压-时间变换方案中容忍频繁的参数变化提供了一个独特而可靠的证据,这增加了电压-时间变换方案的稳健性,减少了实际使用中的设备要求,并避免了测试中的冗余测量和额外校准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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