Rapid Thickness Identification Methodology For Two-Dimensional MoS2 and In2 Se3 Nanosheets Using Optical Microscopy

Darren Wu, Qiu Li, Feifan Wang, Tiantian Li, Tingyi Gu
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Abstract

Problem StatementCurrently, identification methods for the thickness measurement of nanomaterials demand expensive and nonstandard equipment, impairing its continued study, practical applications, and industrial commercialization.The development of a novel and accurate thickness identification methodology is imperative for the continued study and potential commercialization of two-dimensional (2D) materials. Through experimentation, an effective and straightforward methodology has been produced for the thickness identification of MoS2 and In2 Se3 nanosheets on 300nm Si/SiO2 under optical microscopy from approximately single to decuple layer numbers. The optical contrast difference values of the atomically-thin nanostructures were collected throughout and arranged into a standard reference index which was correlated to height number in nanometers. Using this method, the thickness of a substance could be simply and accurately determined without the use of complex instrumentation, experimental setup, and calculation, therefore, saving time and financial costs.
二维MoS2和In2 Se3纳米片的光学显微镜快速厚度鉴定方法
目前,用于纳米材料厚度测量的识别方法需要昂贵和非标准的设备,这损害了其继续研究,实际应用和工业商业化。开发一种新颖而准确的厚度识别方法对于二维材料的持续研究和潜在的商业化是必不可少的。通过实验,建立了一种在光学显微镜下从大约单层数到十层数鉴定300nm Si/SiO2上MoS2和In2 Se3纳米片厚度的有效和简单的方法。自始至终收集原子薄纳米结构的光学对比差值,并将其排列成与纳米高度数相关的标准参考指数。使用该方法,可以简单、准确地测定物质的厚度,而无需使用复杂的仪器、实验装置和计算,从而节省了时间和财务成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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