Low standby power CMOS with HfO/sub 2/ gate oxide for 100-nm generation

Abstract

We have fabricated 55-nm poly-Si gated n- and p-MOSFETs with HfO/sub 2/ gate dielectric of 3-nm physical thickness deposited by atomic layer deposition (ALD). A conventional CMOS process was used with high-temperature S/D anneal of /spl ges/1000/spl deg/C, cobalt-silicide and pocket implants. The devices showed very promising characteristics for low standby power applications due to drastic reduction of gate leakage current.