Thermal and field dependencies of latent relaxation processes in irradiated MOS devices

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698843

V. Emelianov, A. Sogoyan, S.V. Cherepko, O.V. Meshurov, V.N. Ulimov, A. Chumakov, V. Rogov, A. Nikiforov

引用次数: 6

Abstract

Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed.

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辐照MOS器件中潜在弛豫过程的热场依赖性

研究了辐照MOSFET的潜在界面陷阱形成、潜在正电荷退火和分子氢退火响应。讨论了潜在过程的机理和潜在过程对硬度保证的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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