Gigahertz Frequency Graphene Transistor, high yield process and good stability under strain

Abstract

We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width $(12 \mu \mathrm{m}, 24 \mu \mathrm{m}$ and $50 \mu \mathrm{m})$ are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.