Measurement of lateral diffusion profiles for submicrometer MOSFETs

Abstract

A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion.<>