Hydrogen sensing properties of SnO2 nanocrystalline thin films

Abstract

The results of response to hydrogen were presented in this work. SnO2 nanocrystalline thin films have been deposited on silicon substrates by spin-coating from precursor solution, followed by slow thermal annealing in oxygen atmosphere at different temperatures (200–700 °C). The precursor solution consisted of 1.0–2.0 M SnCl4·5H2O in isopropanol. Changes in the layers resistance were measured for the hydrogen concentration range of 0.5%–1.5% in nitrogen atmosphere and in temperature range from 175 °C to 330 °C. Maximum sensor response was observed at 275 °C. On the other hand, the shortest response times were observed at 330 °C.