Performance and stability of flexible low-voltage organic thin-film transistors based on C10-DNTT

Abstract

Using the recently developed organic semiconductor C10-DNTT and a thin, high-capacitance gate dielectric we have fabricated flexible organic thin-film transistors that combine a field-effect mobility of 4.3 cm2/Vs, an on/off ratio of 108, and a subthreshold swing of 68 mV/decade. To improve the charge exchange between the organic semiconductor layer and the metal source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) were inserted between the C10-DNTT and the metal contacts. Flexible ring oscillators have a signal propagation delay of 5 μsec per stage at a supply voltage of 3 V.