Wideband Lithium Niobate FBAR Filters

T. Baron, E. Lebrasseur, F. Bassignot, Haixia Wang, S. Ballandras, L. Catherinot, M. Chatras, L. Estagerie, P. Monfraix
{"title":"Wideband Lithium Niobate FBAR Filters","authors":"T. Baron, E. Lebrasseur, F. Bassignot, Haixia Wang, S. Ballandras, L. Catherinot, M. Chatras, L. Estagerie, P. Monfraix","doi":"10.1155/2013/459767","DOIUrl":null,"url":null,"abstract":"Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address wideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass filters.The piezoelectric material LiNbO3 complies with such specifications and is compatible with standard fabrication processes. In this work, simple metal--LiNbO3--metal structures have been developed to fabricate single FBAR elements directly connected to each other on a single chip. A fabrication process based on LiNbO3/silicon Au-Au bonding and LiNbO3 lapping/polishing has been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented exhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to obtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric tests, corresponding to spatial conditions.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"59 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2013/459767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address wideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass filters.The piezoelectric material LiNbO3 complies with such specifications and is compatible with standard fabrication processes. In this work, simple metal--LiNbO3--metal structures have been developed to fabricate single FBAR elements directly connected to each other on a single chip. A fabrication process based on LiNbO3/silicon Au-Au bonding and LiNbO3 lapping/polishing has been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented exhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to obtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric tests, corresponding to spatial conditions.
宽带铌酸锂FBAR滤波器
基于薄膜体声谐振器(fbar)的滤波器广泛用于移动电话应用,但它们也可以满足宽带航空航天要求。这些器件需要高机电耦合系数来实现大带通滤波器。压电材料LiNbO3符合这些规范,并与标准制造工艺兼容。在这项工作中,已经开发了简单的金属-LiNbO3-金属结构来制造单个FBAR元件,这些元件在单个芯片上直接相互连接。本文提出了一种基于LiNbO3/硅Au-Au键合和LiNbO3研磨/抛光的制备工艺。提出并评价了这些FBAR滤波器的电气测量结果,显示滤波器的分数带宽为8%,插入损耗为3.3 dB。电测量显示可能获得14%的分数带宽。这些设备已经封装,允许功率处理,热和铁电测试,相应的空间条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信