Defect-Resilient Technique of Memristor Crossbar with Large On-Off Ratio for Implementing HTM Spatial Pooler in Near-IoT-Sensor Cognition

Tien Van Nguyen, Jiyong An, Seokjin Oh, K. Min
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Abstract

In this paper, we discuss memristor crossbars with large On-Off ratio are better for improving the read voltage margin, but, unfortunately, more vulnerable to memristor defects. For overcoming this problem using a defect-resilient technique, we explain and review the self-repairable boost-factor circuit presented previously. Based on the technique, we expect HTM spatial pooler with defect-resilient memristor crossbar can be suitable for realizing near-IoT-sensor cognitive hardware in future.
在近物联网传感器认知中实现HTM空间池的大通断比记忆电阻横条缺陷弹性技术
在本文中,我们讨论了大开关比的忆阻交叉棒可以更好地提高读电压裕度,但不幸的是,它更容易受到忆阻缺陷的影响。为了使用缺陷弹性技术克服这一问题,我们解释并回顾了先前提出的自修复升压因子电路。基于该技术,我们期望具有缺陷弹性忆阻交叉棒的HTM空间池可以适用于未来实现近物联网传感器认知硬件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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