AFM tip-induced modification of semiconductor surface properties

Abstract

The method to change surface potential by atomic force microscope (AFM) probe is demonstrated and used. The possibilities of two dimensional electron gas reversible modulations are demonstrated on the example of nanoscale local AFM tip-induced surface nanomodification of heteroepitaxial AlGaAs/GaAs. The surface potential modulation is shown to be 100 mV with sample resistance change being 20-40 KOhm. Surface potential change is detected by Kelvin Scanning Probe Microscopy (KSPM).