Exciton polaritons confined in ZnO nanowires

H-Y Li, L. V. van Vugt, S. Ruhle, L. Kuipers, F. Koenderink, D. V. van Dorp, D. Vanmaekelbergh
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引用次数: 1

Abstract

ZnO is one of the most attractive materials for optical applications in the visible and the near UV range, ranging from large-scale white-light illumination to miniaturized lasers for the near UV. Furthermore, the unique properties of the semiconductor ZnO are of high interest in the field where advanced optics meets the nanoarea. Because of strong exciton transitions near the electronic band gap and an electron-hole binding energy of 60 meV, the optical properties are dominated by strong lightmatter interaction, involving exciton polaritons. In macroscopic ZnO structures, light absorption and emission mediated by excitonpolaritons has been investigated in much detail. It was observed that exciton-photon coupling expressed as the longitudinal-transverse energy splitting is considerable stronger than in other II-VI or III-V semiconductors. In ZnO nanostructures, exciton-photon coupling can even be considerably enhanced due to photon confinement.
氧化锌纳米线中的激子极化子
ZnO是可见光和近紫外范围内最具吸引力的光学应用材料之一,从大规模白光照明到近紫外的小型化激光器。此外,半导体ZnO的独特性质在先进光学与纳米领域相结合的领域受到高度关注。由于电子带隙附近的强激子跃迁和60 meV的电子-空穴结合能,光学性质主要由涉及激子极化的强光物质相互作用决定。在宏观氧化锌结构中,对激子极化子介导的光吸收和发射进行了较为详细的研究。结果表明,以纵向-横向能量分裂表示的激子-光子耦合比其他II-VI或III-V半导体强得多。在ZnO纳米结构中,由于光子约束,激子-光子耦合甚至可以大大增强。
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