A novel infrared microbolometer in standard CMOS-MEMS process

2014 IEEE International Symposium on Bioelectronics and Bioinformatics (IEEE ISBB 2014) Pub Date : 2014-04-11 DOI:10.1109/ISBB.2014.6820898

Meng-Lieh Sheu, Ji-Yi Chen, M. Li, L. Tsao

引用次数: 2

Abstract

A novel infrared micro-bolometer realized in CMOS with MEMS post process is proposed. The micro-bolometer is constructed as a metal micro-cavity to enhance its absorptivity of incident infrared energy. Three testkeys with different cavity structure are presented. The measured sensitivity of the testkeys, in the temperature range of 5-75°C, are 9.56 Ω/°C, 8.78 Ω/°C and 9.89 Ω/°C, respectively. The micro-bolometer occupies a chip area of 439×370 μm² in 0.18 μm process. It is suitable for application on smart biomedical sensor.

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一种标准CMOS-MEMS工艺的新型红外微热计

提出了一种采用MEMS后处理技术在CMOS上实现的新型红外微测热计。微辐射热计被构造成金属微腔，以提高其对入射红外能量的吸收能力。给出了三种不同腔体结构的测试键。在5-75℃温度范围内，测试键的测量灵敏度分别为9.56 Ω/°C、8.78 Ω/°C和9.89 Ω/°C。在0.18 μm工艺下，微测热计的芯片面积为439×370 μm2。它适合应用于智能生物医学传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE International Symposium on Bioelectronics and Bioinformatics (IEEE ISBB 2014)

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