Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design

Abstract

In the framework of MOSFET reliability for mixed-analog application, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stress with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.