Picosecond Nd:GdVO4 laser pumped at 912 nm

2017 Photonics North (PN) Pub Date : 2017-06-01 DOI:10.1109/PN.2017.8090551

M. Nadimi, T. Waritanant, A. Major

引用次数: 0

Abstract

We report on the performance of a semiconductor saturable absorber mirror mode-locked Nd: GdVO4 laser in-band diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power with the pulse width of 16 ps, repetition rate of 85 MHz, optical efficiency of ∼ 50% and slope efficiency of 68%.

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皮秒Nd:GdVO4激光泵浦在912 nm

我们报道了半导体可饱和吸收镜锁模Nd: GdVO4激光带内二极管在912 nm泵浦的性能。激光器产生10.14 W的平均输出功率，脉冲宽度为16 ps，重复频率为85 MHz，光效率为~ 50%，斜率效率为68%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 Photonics North (PN)

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