A highly strained (/spl lambda/=1.12 /spl mu/m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization

Abstract

We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.