Engineering TID modeling for the SEE and performances evaluations of integrated CMOS circuits at cryogenic temperatures

Abstract

This paper presents a total ionizing dose (TID) modeling approach based on experimental Cobalt60 irradiations of n-MOS and p-MOS transistors. The TID models were developed for the investigation of complementary metal oxide semiconductor (CMOS) gates performances used in a readout integrated circuit (ROIC) at cryogenic temperatures.