Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material

Abstract

Full band Monte Carlo device simulation is applied in this paper for a projection of the performance advantages of NMOS transistors with surface channels in strained Si in comparison to conventional Si NMOSTs. For strained Si grown on a Si0 7Ge0 3 buffer an advantage of 30 % in terms of maximum Ion is found.