{"title":"Advances in silicon semiconductor device technology for radio and wireless applications","authors":"L. Larson","doi":"10.1109/RAWCON.2003.1227965","DOIUrl":null,"url":null,"abstract":"Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. This paper summarizes the silicon technology advances associated with radio and wireless applications.","PeriodicalId":177645,"journal":{"name":"Radio and Wireless Conference, 2003. RAWCON '03. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radio and Wireless Conference, 2003. RAWCON '03. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAWCON.2003.1227965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. This paper summarizes the silicon technology advances associated with radio and wireless applications.