AVSS 2011 demo session

Frederic Garcia, B. Mirbach, Ángel Cuesta-Contreras
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Abstract

Summary form only given. In order to maintain the trend of ever-increasing performance, several directions have been pursued by the semiconductor industry in the past decade. i) Conventional Si and SiO 2 are being replaced by more exotic materials, from high-k gate dielectrics to metal gates and to high-mobility substrates, ii) new (3D) device architectures are being developed, iii) devices are downscaled toward atomic dimensions, while iv) supply voltages are not correspondingly reduced.
AVSS 2011演示会议
只提供摘要形式。为了保持性能不断提高的趋势,半导体行业在过去十年中一直在追求几个方向。i)传统的Si和sio2正在被更奇特的材料所取代,从高k栅极电介质到金属栅极和高迁移率基板,ii)新的(3D)器件架构正在开发中,iii)器件缩小到原子尺寸,而iv)电源电压没有相应降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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