A 38GHz SPDT Traveling Wave Switch with 5A CDM ESD Protection in 45nm PDSOI for 5G System

Abstract

This paper presents co-design and analysis of a 38GHz traveling wave single-pole double-through (SPDT) RF switch with robust ESD protection implemented in 45nm PDSOI technology 5G systems in millimeter-wave bands. Substrate coupling is minimized by a buried oxide (BOX) layer. The original switches exhibit insertion loss (IL) of −1.4dB and isolation (Iso) of ~59dB at 38GHz. The design goal of robust charged device model (CDM) ESD protection was realized, achieving ~5A in measurement. Human body model (HBM) ESD of ~2KV was also achieved. The ESD-protected SPDT achieves IL of −3.49dB and Iso of −49dB at 38GHz. Design analysis reveals significant impact of ESD protection on SPDT performance, which was minimized through careful co-design effort, improving insertion loss by ~0.8dB at 38GHz.