Stability Elements and Matching Components of Microwave Amplifier at C-band Frequency: Simulation Analysis

Abstract

The stability elements and matching components of microwave amplifier at C-band frequency are presented in this article, which primarily focuses on a simulation analysis. Agilent’s Advanced Design System software is used to conduct this simulation analysis. To maintain the necessary outputs, such as low noise for low noise amplifier and high power for high power amplifiers, the stability elements and matching components on microwave amplifiers have been a significant consideration. Simultaneously, problems of reliability need more focus to prevent oscillations and ensure that the amplifier function properly. Furthermore, the stability elements and matching components must be completed at the start of the design process to ensure that the circuits are run in a stable area, ensuring that it will be operated properly. In this article, this investigation is tested for two types of transistors at 5 GHz: conditional stable and unconditionally stable transistors. The conditional stable will be represented by the pseudomorphic high electron-mobility transistor, pHEMT of ATF-36077. Meanwhile, the unconditional stable transistor is a power gallium arsenide field-effect transistor (GaAs FET) of the FLC053WG. The stability analysis results for both conditions of the transistor are compared in a calculation or MATLAB with an ADS software simulation. The obtained results show a high level of consensus. To perform well as a microwave amplifier in the stable area, the unconditional stable transistor of ATF-36077 required proper stability and matching components.