Broadband Lumped-Element GaAs FET Power Amplifiers

R. Camisa, J. Klatskin, A. Mikelsons
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引用次数: 7

Abstract

Very small (1.5 mm x 2.25 mm) lumped-element matched amplifiers have been developed which cover the 6-12 GHz with 0.3 W and 0.6 W minimum output power levels. Using these matched carriers as building blocks, a 1 W, 7-12 GHz, four-stage amplifier has been demonstrated.
宽带集总元件GaAs场效应晶体管功率放大器
已经开发出非常小的(1.5 mm x 2.25 mm)集总元件匹配放大器,其覆盖6-12 GHz,最小输出功率水平为0.3 W和0.6 W。利用这些匹配的载波作为构建块,演示了一个1w, 7- 12ghz的四级放大器。
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