Study of pocket implant parameters for 0,18 um CMOS

Abstract

PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of Ion/Ioff ratio.