Simplified Over- Temperature Protection Circuit Structure for WSN/IoT Device Power Management

J. Hora, Xi Zhu, E. Dutkiewicz
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引用次数: 6

Abstract

This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.
用于WSN/IoT设备电源管理的简化过温保护电路结构
本文提出了一种改进的超温保护电路结构,该电路集成到无线传感器节点设备的电源管理转换器设计中。设计重点是实现与标准CMOS技术结构兼容的简化电路结构,并评估过温阈值以保证所需的精度。利用蒙特卡罗分析方法对带隙电压基准进行HSPICE仿真,得到更好的估计、过程变化和可靠性。目标设计温度阈值在大约150℃时获得,这是在最坏温度考虑下的标准芯片测试值。采用65nm 1P9M CMOS 1.2V/2.5V逻辑CMOS技术对所提出的电路设计结构进行布局后仿真。并将其集成到片上系统无线传感器节点设备的电源管理电路设计中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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