RF-MEMS Based V-Band Impedance Tuner Driven by Integrated High-Voltage LDMOS Switch Matrix and Charge Pump

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2019-01-01 DOI:10.1109/SIRF.2019.8709116

C. Wipf, R. Sorge, S. Wipf, A. Göritz, A. Scheit, D. Kissinger, M. Kaynak

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引用次数: 1

Abstract

To demonstrate a fully integrated RF-MEMS based system including HV generation and switching circuitry, a V-Band (40 – 75GHz) single-stub impedance tuner comprising four RF-MEMS switches, a 40V charge pump, and LDMOS based HV switches is developed in a 0.25 $\mu {\mathrm {m}}$ SiGe-BiCMOS technology. The chip size of the designed impedance tuning circuit enables the integration into an on-wafer RF-probe used for noise parameter and load-pull measurements. With the integrated high-voltage generation and switching circuitry the wiring effort, which is necessary to control the integrated RF-MEMS based impedance tuning chip, can be drastically reduced. The operation of the on-chip high-voltage generation and switching circuitry is demonstrated by the measured S-parameters for various combinations of activated RF-MEMS switches. The four integrated RFMEMS switches enable 16 impedance states in the frequency range between 40GHz and 60GHz.

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集成高压LDMOS开关矩阵和电荷泵驱动的RF-MEMS v波段阻抗调谐器

为了演示一个完全集成的基于RF-MEMS的系统，包括高压产生和开关电路，采用0.25 $\mu {\mathrm {m}}$ SiGe-BiCMOS技术开发了一个v波段(40 - 75GHz)单stub阻抗调谐器，该调谐器由四个RF-MEMS开关、一个40V电荷泵和基于LDMOS的高压开关组成。所设计的阻抗调谐电路的芯片尺寸使其能够集成到晶圆上的rf探针中，用于噪声参数和负载-拉力测量。通过集成的高压产生和开关电路，可以大大减少控制基于RF-MEMS的集成阻抗调谐芯片所需的布线工作量。通过测量各种激活RF-MEMS开关组合的s参数，证明了片上高压产生和开关电路的运行。四个集成的RFMEMS开关在40GHz和60GHz之间的频率范围内实现16种阻抗状态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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